Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)
- 2005.11a
- /
- Pages.599-602
- /
- 2005
Modification of CPW Pad Design for High fmax InGaAs/InAlAs Metamorphic High Electron Mobility Transistors
높은 $f_{max}$ 를 갖는 InGaAs/InAlAs MHEMT 의 Pad 설계
- Choi, Seok-Gyu (Millimeter-wave INnovation Technology research center(MINT), Donggok University) ;
- Lee, Bok-Hyung (Millimeter-wave INnovation Technology research center(MINT), Donggok University) ;
- Lee, Mun-Kyo (Millimeter-wave INnovation Technology research center(MINT), Donggok University) ;
- Kim, Sam-Dong (Millimeter-wave INnovation Technology research center(MINT), Donggok University) ;
- Rhee, Jin-Koo (Millimeter-wave INnovation Technology research center(MINT), Donggok University)
- Published : 2005.11.26
Abstract
In this paper, we have performed a study that modifies the CPW Pad configurations to improve an
Keywords