Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Studies on the High-gain Low Noise Amplifier and Module Fabrication for V-band

V-band 용 고이득 저잡음 증폭기와 모듈 제작에 관한 연구

  • Baek, Yong-Hyun (Electronics Engineering Department, Dongguk University) ;
  • Lee, Bok-Hyung (Electronics Engineering Department, Dongguk University) ;
  • An, Dan (Electronics Engineering Department, Dongguk University) ;
  • Lee, Mun-Kyo (Electronics Engineering Department, Dongguk University) ;
  • Jin, Jin-Man (Electronics Engineering Department, Dongguk University) ;
  • Ko, Du-Hyun (Electronics Engineering Department, Dongguk University) ;
  • Lee, Sang-Jin (Electronics Engineering Department, Dongguk University) ;
  • Lim, Byeong-Ok (Electronics Engineering Department, Dongguk University) ;
  • Baek, Tae-Jong (Electronics Engineering Department, Dongguk University) ;
  • Choi, Seok-Gyu (Electronics Engineering Department, Dongguk University) ;
  • Rhee, Jin-Koo (Electronics Engineering Department, Dongguk University)
  • 백용현 (동국대학교 공과대학 전자공학과) ;
  • 이복형 (동국대학교 공과대학 전자공학과) ;
  • 안단 (동국대학교 공과대학 전자공학과) ;
  • 이문교 (동국대학교 공과대학 전자공학과) ;
  • 진진만 (동국대학교 공과대학 전자공학과) ;
  • 고두현 (동국대학교 공과대학 전자공학과) ;
  • 이상진 (동국대학교 공과대학 전자공학과) ;
  • 임병옥 (동국대학교 공과대학 전자공학과) ;
  • 백태종 (동국대학교 공과대학 전자공학과) ;
  • 최석규 (동국대학교 공과대학 전자공학과) ;
  • 이진구 (동국대학교 공과대학 전자공학과)
  • Published : 2005.11.26
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Abstract

In this paper, millimeter-wave monolithic integrated circuit (MIMIC) low noise amplifier (LNA) for V-band, which is applicable to 58 GHz, we designed and fabricated. We fabricated the module using the fabricated LNA chips. The V-band MIMIC LNA was fabricated using the high performance $0.1\;{\mu}\;m$ ${\Gamma}-gate$ pseudomorphic high electron mobility transistor (PHEMT). The MIMIC LNA was designed using active and passive device library, which is composed $0.1\;{\mu}\;m$ ${\Gamma}-gate$ PHEMT and coplanar waveguide (CPW) technology. The designed V-band MIMIC LNA was fabricated using integrated unit processes of active and passive device. Also we fabricated CPW-to-waveguide fin-line transition of WR-15 type for module. The Transmission Line was fabricated using RT Duroid 5880 substrate. The measured results of V-band MIMIC LNA and Module are shown $S_{21}$ gain of 13.1 dB and 8.3 dB at 58 GHz, respectively. The fabricated LNA chip and Module in this work show a good noise figure of 3.6 dB and 5.6 dB at 58 GHz, respectively.

Keywords