Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
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A Study on the electrical characteristics of high voltage MOSFET with the various structure under the high temperature condition

Asymmetric 고 내압 MOSFET의 구조적 변화에 따른 고온 영역에서의 전기적 특성 분석

  • Choi, In-Chul (Dept. of Electronic Engineering, Seokyeong University) ;
  • Lee, Jo-Woon (Dept. of Electronic Engineering, Seokyeong University) ;
  • Park, Tae-Su (Dept. of Electronic Engineering, Seokyeong University) ;
  • Koo, Yong-Seo (Dept. of Electronic Engineering, Seokyeong University)
  • Published : 2005.11.26
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Abstract

In this study, the electrical characteristic of asymmetric high voltage MOSFET (AHVMOSFET) for display IC was investigated. Measurement data are taken over range of temperature (300K-400K) and various extended drain length, and gate oxide thickness ($175{\AA}$, $350{\AA}$). In high temperature condition, drain current decreased over 30% and max transconductance deceased over 40%, and specific on-resistance increased over 30% in comparison with room temperature.

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