Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2005.05a
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- Pages.58-61
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- 2005
Post-annealing of Al-doped ZnO films in hydrogen atmosphere
Al이 도핑된 투명전극용 ZnO 박막의 수소 열처리에 관한 특성연구
- Oh, Byeong-Yun (Yonsei University) ;
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Jeong, Min-Chang
(Yonsei University) ;
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Lee, Woong
(Yonsei University) ;
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Myoung, Jae-Min
(Yonsei University)
- Published : 2005.05.13
Abstract
In an effort to improve the electrical properties of ZnO:Al transparent electrode films, post-annealing treatment in hydrogen atmosphere was attempted with varying annealing time at 573 K for compatibility with typical display device fabrication processes. It was observed that carrier concentrations and mobilities increased with longer annealing time with small changes in crystallinity. This resulted in substantial decrease in resistivity from
Keywords
- Al-doped ZnO (ZnO:Al);
- Transparent conductive oxide (TCO);
- Hydrogen annealing;
- Passivation;
- Co-sputtering