한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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고분자 기판 상에 제작된 극저온 다결정 실리콘 박막 트랜지스터에 관한 연구

Fabrication of Ultra Low Temperature Poly crystalline Silicon Thin-Film Transistors on a Plastic Substrate

  • 김영훈 (전자부품연구원 디스플레이연구센터) ;
  • 김원근 (전자부품연구원 디스플레이연구센터) ;
  • 문대규 (전자부품연구원 디스플레이연구센터) ;
  • 한정인 (전자부품연구원 디스플레이연구센터)
  • Kim, Yong-Hoon (Information Display Research Center, Korea Electronics Technology Institute) ;
  • Kim, Won-Keun (Information Display Research Center, Korea Electronics Technology Institute) ;
  • Moon, Dae-Gyu (Information Display Research Center, Korea Electronics Technology Institute) ;
  • Han, Jeong-In (Information Display Research Center, Korea Electronics Technology Institute)
  • 발행 : 2005.07.07
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초록

This letter reports the fabrication of polycrystalline silicon thin-film transistors (poly-Si TFT) on flexible plastic substrates using amorphous silicon (a-Si) precursor films by sputter deposition. The a-Si films were deposited with mixture gas of argon and helium to minimize the argon incorporation into the film. The precursor films were then laser crystallized using XeCl excimer laser irradiation and a four-mask-processed poly-Si TFTs were fabricated with fully self-aligned top gate structure.

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