한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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- Pages.416-417
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- 2005
초음파 기술을 이용한 실리콘 이방성 식각 공정에서의 표면 평탄화 향상 연구
Surface Flatness Improvement in Si Anisotropy Etching Process Utilizing Ultrasonic Wave Technology
- Yun, Eui-Jung (Dept. of Information & Control Engin., Hoseo Univ.) ;
- Kim, Jwa-Yeon (Dept. of New Material Engin., Hoseo Univ.) ;
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Lee, Kang-Won
(KITECH) ;
- Lee, Seok-Tae (KITECH)
- 발행 : 2005.07.07
초록
In this study, we optimized the process of Si anisotropy etching by combing tetramethyl ammonium hydroxide (TMAH) etching process with ultrasonic wave technology. New ultrasonic TMAH etching apparatus was developed and it was used for fabricating a