Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2005.07a
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- Pages.195-196
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- 2005
A study on MOS Characteristics of 2'nd Silicidation Process
2단계 실리사이드 형성방법에 의한 MOS 공정특성 연구
- Eom, Gum-Yong (Seong Nam Polytechnic College) ;
- Han, Gi-Kwan (Korea Information & Communication Polytechnic College)
- Published : 2005.07.07
Abstract
In recent years, as the needs of MOS's a high quality is desired to get the superior electrical characteristics and reliability on MOSFET. As an alternative gate dielectric have drawn considerable alternation due to their superior performance and reliability properties over MOSFET, 2'nd silicidation formation process has been proposed as a dielectric growth/annealing process. In this study the author observed process characteristics on MOS structure. In view points of the process characteristics of MOS capacitor, the oxygen & polysilicon was analyzed by SIMS analysis on l'st & 2'nd Ti process, the oxygen and Si2 contents[Count/sec] of 1.5e3 & 3.75e4 on l'st process and l.1e3 & 2.94e4 on 2'nd process, the Ti contents' of 8.2e18 & 6.5e18 on 1'st and 2'nd process. The sheet resistance[