한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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- Pages.193-194
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- 2005
고온 패드 컨디셔닝 후 열산화막 연마 메커니즘 연구
Study on Polishing Mechanism of Thermal Oxide Film after High-Temperature Conditioning
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Choi, Gwon-Woo
(Chosun Univ.)
;
- Kim, Nam-Hoon (Chosun Univ.) ;
- Seo, Yong-Jin (Daebul Univ.) ;
- Lee, Woo-Sun (Chosun Univ.)
- 발행 : 2005.07.07
초록
By the high-temperature pad conditioning process: The slurry residues in pores and grooves of the polishing pad were clearly removed. These clear pores and enlarged grooves made the slurry attack the oxide surface. The changed slurry properties by high-temperature pad conditioning process made the oxide surface hydro-carbonate to be removed easily.
키워드