한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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- Pages.172-173
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- 2005
Y이 도핑된 ZnO의 전자상태 계산
Calculation on Electronic State of Y-doped ZnO
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이동윤
(한국전기연구원 전자기소자연구그룹) ;
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이원재
(한국전기연구원 전자기소자연구그룹) ;
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송재성
(한국전기연구원 전자기소자연구그룹) ;
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구보근
(한국전기연구원 전자기소자연구그룹) ;
- 김현주 (한국전기연구원 전자기소자연구그룹)
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Lee, Dong-Yoon
(Korea Electrotechnology Research Institute) ;
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Lee, Won-Jae
(Korea Electrotechnology Research Institute) ;
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Song, Jae-Sung
(Korea Electrotechnology Research Institute) ;
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Koo, Bo-Kun
(Korea Electrotechnology Research Institute) ;
- Kim, Hyun-Ju (Korea Electrotechnology Research Institute)
- 발행 : 2005.07.07
초록
The electronic state of ZnO doped with Y was calculated using the density functional theory. In this study, the program used for the calculation on theoretical structures of ZnO and doped ZnO was Vienna Ab-initio Simulation Package (VASP), which is a sort of pseudo potential method. The detail of electronic structure was obtained by the descrite variational