Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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F Ion-Assisted Effect on Dry Etching of GaAs over AlGaAs and InGaP

GaAs/AlGaAs와 GaAs/InGaP의 건식 식각 시 Flourine 이온의 효과

  • Jang, Soo-Ouk (School of Nano Eng./Center of Nano-Technology Applications INJE Univ.) ;
  • Park, Min-Young (School of Nano Eng./Center of Nano-Technology Applications INJE Univ.) ;
  • Choi, Chung-Ki (School of Nano Eng./Center of Nano-Technology Applications INJE Univ.) ;
  • Yoo, Seung-Ryul (School of Nano Eng./Center of Nano-Technology Applications INJE Univ.) ;
  • Lee, Je-Won (School of Nano Eng./Center of Nano-Technology Applications INJE Univ.) ;
  • Song, Han-Jung (School of Nano Eng./Center of Nano-Technology Applications INJE Univ.) ;
  • Jeon, Min-Hyon (School of Nano Eng./Center of Nano-Technology Applications INJE Univ.)
  • 장수욱 (인제대학교 나노공학부/나노기술 응용센터) ;
  • 박민영 (인제대학교 나노공학부/나노기술 응용센터) ;
  • 최충기 (인제대학교 나노공학부/나노기술 응용센터) ;
  • 유승열 (인제대학교 나노공학부/나노기술 응용센터) ;
  • 이제원 (인제대학교 나노공학부/나노기술 응용센터) ;
  • 승한정 (인제대학교 나노공학부/나노기술 응용센터) ;
  • 전민현 (인제대학교 나노공학부/나노기술 응용센터)
  • Published : 2005.07.07
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Abstract

The dry etch characteristics of GaAs over both AlGaAs and InGaP in planar inductively coupled $BCl_3$-based plasmas(ICP) with additions of $SF_6$ or $CF_4$ were studied. The additions of flourine gases provided enhanced etch selectivities of GaAs/AlGaAs and GaAs/InGaP. The etch stop reaction involving formation of involatile $AlF_3$ and $InF_3$ (boiling points of etch products: $AlF_3\sim1300^{\circ}C$, $InF_3$ > $1200^{\circ}C$ at atmosphere) were found to be effective under high density inductively coupled plasma condition. Decrease of etch rates of all materials was probably due to strong increase of flourine atoms in the discharge, which blocked the surface of the material against chlorine neutral adsorption. The process parameters were ICP source power (0 - 500 W), RF chuck power (0 - 30 W) and variable gas composition. The process results were characterized in terms of etch rate, selectivities of GaAs over AlGaAs and InGaP, surface morphology, surface roughness and residues after etching.

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