Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2005.07a
- /
- Pages.133-134
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- 2005
Analyzing the characteristics of Thermal Transient on MOSFET depending on Heat Sink junction methods
MOSFET의 히트싱크 부착방법에 따른 Thermal Transient 특성변화 분석
-
Kim, Ki-Hyun
(KERI)
;
-
Seo, Kil-Soo
(KERI)
;
-
Kim, Hyoung-Woo
(KERI)
;
-
Kim, Nam-Kyun
(KERI)
;
-
Kim, Sang-Choel
(KERI)
;
-
Kim, Eun-Dong
(KERI)
- Published : 2005.07.07
Abstract
When Power MOSFET is operated, it causes lots of heat, which influences negatively on the characteristics of the devices and shorten the lifespan of them. Therefore, a heat sink should be mounted on to emit the heat. In this experiment, we've found the changes of the characteristics of Thermal Transient of MOSFET when a heat sink is applied. In addition, we've found other changes when heat sink compound is applied as well.