한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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- Pages.118-119
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- 2005
Novel GST/TiAlN 구조를 갖는 상변화 메모리 소자의 전기적 특성
Electrical Properties of Phase Change Memory Device with Novel GST/TiAlN structure
- 이남열 (한국전자통신연구원, 기반기술연구소) ;
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최규정
(한국전자통신연구원, 기반기술연구소) ;
- 윤성민 (한국전자통신연구원, 기반기술연구소) ;
- 류상욱 (한국전자통신연구원, 기반기술연구소) ;
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박영삼
(한국전자통신연구원, 기반기술연구소) ;
- 이승윤 (한국전자통신연구원, 기반기술연구소) ;
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유병곤
(한국전자통신연구원, 기반기술연구소)
- Lee, Nam-Yeal (Basic Research Laboratory, Electronics & Telecommunications Research Institute (ETRI)) ;
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Choi, Kyu-Jeong
(Basic Research Laboratory, Electronics & Telecommunications Research Institute (ETRI)) ;
- Yoon, Sung-Min (Basic Research Laboratory, Electronics & Telecommunications Research Institute (ETRI)) ;
- Ryu, Sang-Ouk (Basic Research Laboratory, Electronics & Telecommunications Research Institute (ETRI)) ;
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Park, Young-Sam
(Basic Research Laboratory, Electronics & Telecommunications Research Institute (ETRI)) ;
- Lee, Seung-Yun (Basic Research Laboratory, Electronics & Telecommunications Research Institute (ETRI)) ;
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Yu, Byoung-Gon
(Basic Research Laboratory, Electronics & Telecommunications Research Institute (ETRI))
- 발행 : 2005.07.07
초록
PRAM (Phase Change Random Access Memory) is well known to use reversible phase transition between amorphous (high resistance) and crystalline (low resistance) states of chalcogenide thin film by electrical Joule heating. In this paper, we introduce a stack-type PRAM device with a novel GST/TiAlN structures (GST and a heating layer of TiAlN), and report its electrical switching properties. XRD analysis result of GST thin film indicates that the crystallization of the GST film start at about