한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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- Pages.70-71
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- 2005
OTFT의 게이트 절연막에 사용된 점착층에 대한 영향
The Effect of Adhesion layer on Gate Insulator for OTFTs
- Lee, Dong-Hyun (Hongik Univ.) ;
- Hyung, Gun-Woo (Hongik Univ.) ;
- Pyo, Sang-Woo (Hongik Univ.) ;
- Kim, Jung-Soo (Hongik Univ.) ;
- Kim, Young-Kwan (Hongik Univ.)
- 발행 : 2005.07.07
초록
The electrical performances of organic thin-film transistors (OTFTs) have been improved for the last decade. In this paper, it was demonstrated that the electrical characteristics of the organic thin film transistors (OTFTs) were improved by using polymeric material as adhesion layer on gate insulator. We have investigated OTFTs with polyimide adhesion layer which was fabricated by vapor deposition polymerization (VDP) processing and formed by co-deposition of 6FDA and ODA. It was found that the OTFTs with adhesion layer showed better electrical characteristics than with bare layer because of good matching between semiconductor and gate insulator. Our devices of performance are field effect mobility of