Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2005.07a
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- Pages.64-65
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- 2005
Characteristics of tantalum nitride thin film resistors deposited on $SiO_2/Si$ substrate using D.C-magnetron sputtering
- Cuong, Nguyen Duy (Department of Materials Science and Engineering, Chungnam National University) ;
- Phuong, Nguyen Mai (Department of Materials Science and Engineering, Chungnam National University) ;
- Kim, Dong-Jin (KMC technology) ;
- Kang, Byoung-Don (Department of Materials Science and Engineering, Chungnam National University) ;
- Kim, Chang-Soo (Material Evaluation Center, Korea Research Institute of Standards and Science) ;
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Yoon, Soon-Gil
(Department of Materials Science and Engineering, Chungnam National University)
- Published : 2005.07.07
Abstract
The structural and electrical properties of the films are investigated as a function of nitrogen/argon ratio at room temperature and at various deposition temperatures. The phase changes as