Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Electrical Characteristics of Ultra-thin $SiO_2$ Films experienced Hydrogen or Deuterium High-pressure Annealing

고압의 수소 및 중수소 분위기에서 열처리된 실리콘 산화막의 전기적 특성 관찰

  • Published : 2005.07.07
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Abstract

Experimental results are presented for the degradation of 3 nm-thick gate oxide ($SiO_2$) under both Negative-bias Temperature Instability(NBTI) and Hot-carrier-induced(HCI) stresses using P and NMOSFETs that are annealed with hydrogen or deuterium gas at high-pressure (1~5 atm.). Statistical parameter variations depend on the stress conditions. We suggest that deuterium bonds in $SiO_2$ film is effective in suppressing the generation of traps related to the energetic hot electrons.

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