Enhanced efficiency of organic light-emitting diodes by doping the holetransport layer

  • Kwon, Do-Sung (School of Electrical Engineering and Computer Sciences, Seoul National University) ;
  • Song, Jun-Ho (Department of Physics, Inha University) ;
  • Lee, Hyun-Koo (School of Electrical Engineering and Compute r Sciences, Seoul National University) ;
  • Shin, You-Chul (School of Electrical Engineering and Compute r Sciences, Seoul National University) ;
  • Lee, Chang-Hee (School of Electrical Engineering and Compute r Sciences, Seoul National University)
  • Published : 2005.07.19

Abstract

We present that the carrier balance can be improved by doping a hole transport layer of 4,4'- bis[N-(1-napthyl)-N-phenyl-amino]-biphenyl (${\alpha}$-NPD) with a hole blocking material of 2,9-dimethyl- 4,7-diphenyl-1,10-phenanthroline (BCP). The doping leads to disturb hole transport, which can enhance the balance of electron s and holes concentration in the emitting layer, aluminum tris(8 -hydroxyquinoline) (Alq3), resulting in enhanced electroluminescence (EL) quantum efficiency for the device with the doped ${\alpha}$-NPD.

Keywords