한국정보디스플레이학회:학술대회논문집
- 2005.07b
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- Pages.1361-1363
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- 2005
Stability of Organic Thin Film Transistors (OTFTs) with Au and ITO S/D(Source/Drain) Electrodes
- Lee, Hun-Jung (Corporate R&D Center, Samsung SDI Co., LTD.) ;
- Kim, Sung-Jin (Corporate R&D Center, Samsung SDI Co., LTD.) ;
- Lee, Sang-Min (Corporate R&D Center, Samsung SDI Co., LTD.) ;
- Ahn, Taek (Corporate R&D Center, Samsung SDI Co., LTD.) ;
- Park, Young-Woo (Corporate R&D Center, Samsung SDI Co., LTD.) ;
- Suh, Min-Chul (Corporate R&D Center, Samsung SDI Co., LTD.) ;
- Mo, Yeon-Gon (Corporate R&D Center, Samsung SDI Co., LTD.) ;
- Chung, Ho-Kyoon (Corporate R&D Center, Samsung SDI Co., LTD.)
- Published : 2005.07.19
Abstract
In this paper, we report on the performance stability of solution processible OTFT devices with Au/Ti and ITO source-drain (S/D) electrodes. It appears that the contact resistance of the S/D electrode strongly affects the stability of OTFT devices. Interestingly, the devices with the Au/Ti electrode showed lower mobility than those with the ITO (S/D) devices. The field effect mobilities of the devices with the Au/Ti and ITO electrodes were 0.06, and
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