Proceedings of the Korean Institute of Information and Commucation Sciences Conference (한국정보통신학회:학술대회논문집)
- Volume 9 Issue 1
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- Pages.371-375
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- 2005
Resonance Characteristics of ZnO-Based FBAR Devices by Two-Step Annealings
- Song, Hae-Il (School of Engineering, Information and Communications University) ;
- Mai, Linh (School of Engineering, Information and Communications University) ;
- Yoon, Gi-Wan (School of Engineering, Information and Communications University)
- Published : 2005.05.27
Abstract
In this paper, the resonance characteristics of ZnO-based FBAR devices are compared. Several FBAR device samples were fabricated by using three different annealing methods while one sample remained non-annealed as a reference for comparison. Resonance characteristics could be significantly improved by both Bragg reflector-annealing and/or post-annealing steps. Especially, the use of two-step annealings resulted in most desirable resonance characteristic improvement compared with the Bragg reflector-annealing or post-annealing step alone.
Keywords
- Film bulk acoustic resonator (FBAR);
- Bragg reflector;
- Thermal annealing;
- Return loss (S$_{11}$);
- Q-factor