한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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- Pages.130-131
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- 2005
MOS 구조에서 실리사이드 형성단계의 공정특성 분석
Analysis on Proecwss Characteristics of 2'nd Silicidation Formation Process at MOS Structure
초록
In the era of submicron devices, super ultra thin gate oxide characteristics are required. Titanium silicide process has studied gate oxide reliability and dielectric strength characteristics as the composition of gate electrode. In this study the author observed process characteristics on MOS structure. In view point of the process characteristics of MOS capacitor, the oxygen & Ti, Si2 was analyzed by SIMS analysis on before and after annealing with 1,2 step silicidation, the Ti contents[Count/sec]of