한국반도체및디스플레이장비학회:학술대회논문집 (Proceedings of the Korean Society Of Semiconductor Equipment Technology)

한국반도체디스플레이기술학회 (The Korean Society Of Semiconductor & Display Technology)
권호 표지

The Investigation of Ni Thin Film by Atomic Layer Deposition

  • Do K. W. (School of Electrical Engineering and Computer Science, Kyungpook National University) ;
  • Yang C. M. (School of Electrical Engineering and Computer Science, Kyungpook National University) ;
  • Kang I. S. (School of Electrical Engineering and Computer Science, Kyungpook National University) ;
  • Kim K. M. (School of Electrical Engineering and Computer Science, Kyungpook National University) ;
  • Back K. H. (School of Electrical Engineering and Computer Science, Kyungpook National University) ;
  • Cho H. I. (School of Electrical Engineering and Computer Science, Kyungpook National University) ;
  • Lee H. B. (School of Electrical Engineering and Computer Science, Kyungpook National University) ;
  • Kong S. H. (School of Electrical Engineering and Computer Science, Kyungpook National University) ;
  • Hahm S. H. (School of Electrical Engineering and Computer Science, Kyungpook National University) ;
  • Kwon D. H. (School of Electronic Information & Communication Eng., Kyungil University) ;
  • Lee J. H. (School of Electrical Engineering and Computer Science, Kyungpook National University) ;
  • Lee J. H. (School of Electrical Engineering and Computer Science, Kyungpook National University)
  • 발행 : 2005.09.01
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초록

Low resistance Ni thin films for using NiSi formation and metallization by atomic layer deposition (ALD) method have been studied. ALD temperature window is formed between $200^{\circ}C\;and\;250^{\circ}C$ with deposition rate of $1.25{\AA}$/cycle. The minimum resistance of deposited Ni films shows $4.333\;{\Omega}/\square$ on the $SiO_2/Si$ substrate by $H_2$ direct purging process. The reason of showing the low resistance is believed to be due to format ion of the $Ni_3C$ phase by residual carbon in Bis-Ni The deposited film exhibits excellent step coverage in the trench having 1(100 nm) : 16 (1.6 um) aspect ratio.

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