Proceedings of the Korean Magnestics Society Conference (한국자기학회:학술대회 개요집)
- 2005.06a
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- Pages.96-97
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- 2005
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- 2233-9485(pISSN)
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- 2233-9574(eISSN)
Magnetization Switching Characteristic of MTJs with Synthetic Antiferrornagnet Free Layers Consisting of Amorphous CoFeSiB
비정질 CoFeSiB 합성형 반강자성 자유층을 갖는 MTJs의 자화스위칭특성
- Hwang J. Y. (Department of Physics, Sookmyung Women's University) ;
- Kim S. S. (Department of Physics, Sookmyung Women's University) ;
- Kim M. Y. (Department of Physics, Sookmyung Women's University) ;
- Rhee J. R. (Department of Physics, Sookmyung Women's University) ;
- Chun B. S. (Department of Materials Science and Engineering, Korea University) ;
- Kim Y. K. (Department of Materials Science and Engineering, Korea University) ;
- Kim T. W. (Materials and Devices Laboratory, Samsung Advanced Institute of Technology) ;
- Park W. J. (Materials and Devices Laboratory, Samsung Advanced Institute of Technology)
- Published : 2005.06.01
Abstract
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