A study on the sintering condition and Electric properties of BST thick film

BST Tunable 후막 유전체의 소결과 유전 특성엘 관한 연구

  • 김인성 (한국전기연구원 전자기소자연구그룹) ;
  • 민복기 (한국전기연구원 전자기소자연구그룹) ;
  • 송재성 (한국전기연구원 전자기소자연구그룹) ;
  • 전소현 (경남대학교 신소재공학과)
  • Published : 2005.07.18

Abstract

In this paper, Effect of $BaSrTiO_3/Li_2CO_3$ on low temperature sintering and dielectric property of thick films has been investigated for variable capacitor on high frequency. The thick films were fabricated by the tape casting and then the structural and dielectric properties as a function of an addition composition ratio and sintering temperature were studied. For the thick film sintered at $1050^{\circ}C$, it was densified to 96% of $BaSrTiO_3$ theoretical density by the addition of 10 $wt{\cdot}%$ $BaSrTiO_3/Li_2CO_3$. Dielectric constant increased and Curie temperature lowered with the increased of $BaSrTiO_3/Li_2CO_3$ content, which probably can be explained by the substitution of $Ba^{3+},Li^{1+}$ on $RaTiO_3$ lattice. The tunability and dielectric loss of the $BaSrTiO_3/Li_2CO_3$ thick film, sintered at $1350^{\circ}C$, were about 26% and 0.234 at $10{\sim}15MHz$, respectively.

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