Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 2005.07c
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- Pages.1957-1959
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- 2005
Electrical characteristics of the SOI RESURF LDMOSFET as a function of surface doping concentration
표면 도핑 두께에 따른 SOI RESURF LDMOSFET의 전기적 특성분석
- Kim, Hyoung-Woo (Korea Electrotechnology Research Institute) ;
- Kim, Sang-Cheol (Korea Electrotechnology Research Institute) ;
- Seo, Kil-Soo (Korea Electrotechnology Research Institute) ;
- Bahng, Wook (Korea Electrotechnology Research Institute) ;
- Kim, Nam-Kyun (Korea Electrotechnology Research Institute) ;
- Kim, Eun-Dong (Korea Electrotechnology Research Institute)
- Published : 2005.07.18
Abstract
표면이 도핑된 SOI RESURF LDMOSFET에 대해 표면 도핑의 깊이에 따른 항복전압 및 순방향 특성을 분석하였다. 표면 도핑영역의 깊이를
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