Proceedings of the KAIS Fall Conference (한국산학기술학회:학술대회논문집)
- 2004.11a
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- Pages.195-198
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- 2004
Tungsten Nitride Diffusion Barrier with Using Plasma Atomic Layer Deposition for Copper Interconnection
플라즈마 원자층 증착법을 이용한 구리배선용 텅스텐 나이트라이드 확산 방지막의 특성 평가
- Park Ji Ho (Division of Electronics Engineering, Dankook University) ;
- Sim Hyun Sang (Toyohashi University of Technology Department of Ecological Engineering) ;
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Kim Yong Tae
(Semiconductor Materials and Devices Lab,, Korea Institute of Science and Technology) ;
- Kim Hee Joon (Toyohashi University of Technology Department of Ecological Engineering) ;
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Chang Ho Jung
(Division of Electronics Engineering, Dankook University)
- Published : 2004.11.01
Abstract
실리콘 산화막 위에 구리 확산 방지막으로서 W-N 박막을
Keywords