한국정보디스플레이학회:학술대회논문집
- 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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- Pages.1258-1261
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- 2004
Comparison of Degradation Phenomenon in the Low-Temperature Polysilicon Thin-Film Transistors with Different Lightly Doped Drain Structures
- Lee, Seok-Woo (LG. Philips LCD R&D Center) ;
- Kang, Ho-Chul (LG. Philips LCD R&D Center) ;
- Nam, Dae-Hyun (LG. Philips LCD R&D Center) ;
- Yang, Joon-Young (LG. Philips LCD R&D Center) ;
- Kim, Eu-Gene (LG. Philips LCD R&D Center) ;
- Kim, Sang-Hyun (LG. Philips LCD R&D Center) ;
- Lim, Kyoung-Moon (LG. Philips LCD R&D Center) ;
- Kim, Chang-Dong (LG. Philips LCD R&D Center) ;
- Chung, In-Jae (LG. Philips LCD R&D Center)
- 발행 : 2004.08.23
초록
Degradation phenomenon in the low-temperature polysilicon (LTPS) thin-film transistors (TFTs) with different junction structures was investigated. A gate-overlapped lightly doped drain (GOLDD) structure showed better hot-carrier stress (HCS) stability than a conventional LDD one. On the other hand, high drain current stress (HDCS) at
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