High-Luminous Efficiency Full-Color Emitting $GdVO_4$:Eu, Er, Tm Phosphor Thin Films

  • Minami, Takatsugu (Doptoelectronic Device System R&D Center, Kanazawa Institute of Technology) ;
  • Miyata, Toshihiro (Doptoelectronic Device System R&D Center, Kanazawa Institute of Technology) ;
  • Mochizuki, Yuu (Doptoelectronic Device System R&D Center, Kanazawa Institute of Technology)
  • Published : 2004.08.23

Abstract

High-luminous efficiency full-color emissions in photoluminescence (PL) were obtained in $GdVO_4$ phosphor thin films co-doped with various amounts of Eu, Er and/or Tm and postannealed at approximately 1000$^{\circ}C$. The $GdVO_4$:Eu,Er,Tm phosphor thin films were deposited on thick $BaTiO_3$ ceramic sheets by r.f. magnetron sputtering using powder targets and postannealed in an air atmosphere. The rare earth (RE) content (RE/(Gd+V+RE) atomic ratio) in the oxide phosphor thin films was varied in the range from 0.1 to 2 at.%. It was found that the excitation of $GdVO_4$:Eu.Er,Tm thin films is attributed to band-to-band transition. A white PL emission was obtained in a $GdVO_4$:Eu,Er,Tm thin film with Eu, Er and Tm contents of 0.2, 0.7 and 1 at.%, respectively: CIE chromaticity color coordinates. (X=0.352 and Y=0.351). In addition, a white emission was obtained in a thin-film electroluminescent (TFEL) device made with this thin film.

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