The effect of annealing method on dopant-activation and damage-recovery in ion-shower-doped Poly-Si using $PH_3/H_2$

Ion shower doping using a source gas of $PH_3/H_2$ was conducted on excimer-laser-annealed (ELA) Poly-Si. As-implanted damage is accumulated more and more with the increase of an acceleration voltage and a doping time. In this study we found that dopant-activation is relatively a rapid kinetic-process while damage-recovery is not.