Modification of Dielectric Surface in Organic Thin-Film Transistor with Organic Molecule

  • Kim, Jong-Moo (Display and Nano Devices Lab., Korea Institute of Science and Technology, School of Electrical, Electronics and Computer Engineering, Dankook University) ;
  • Lee, Joo-Won (Display and Nano Devices Lab., Korea Institute of Science and Technology) ;
  • Kim, Young-Min (Display and Nano Devices Lab., Korea Institute of Science and Technology) ;
  • Park, Jung-Soo (Display and Nano Devices Lab., Korea Institute of Science and Technology) ;
  • Kim, Jai-Kyeong (Display and Nano Devices Lab., Korea Institute of Science and Technology) ;
  • Ju, Byeong-Kwon (Display and Nano Devices Lab., Korea Institute of Science and Technology) ;
  • Oh, Myung-Hwan (School of Electrical, Electronics and Computer Engineering, Dankook University) ;
  • Kim, Jong-Seung (Department of Chemistry, Dankook University) ;
  • Jang, Jin (Department of Information Display, Kyung Hee University)
  • Published : 2004.08.23

Abstract

We herewith report for the effect of dielectric surface modification on the electrical characteristics of organic thin-film transistors (OTFTs). The kist-jm-1 as an organic molecule for the surface modification is deposited onto the surface of zirconium oxide ($ZrO_2$) gate dielectric layer. The OTFTs are elaborated on the flexible plastic substrates through 4-level mask process to yield a simple fabrication process. In this work, we also have examined the dependence of electrical performance on the interface surface state of gate dielectric/pentacene, which may be modified by chemical properties in the gate dielectric surface.

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