Pentacene TFTs and Integrated Circuits with PVP as Gate Insulator

  • Xu, Yong-Xian (Nano Organic device Lab. & Dept. of Electronic&Electronics&Computer Eng. Dong-A Univ.) ;
  • Byun, Hyun-Sook (Nano Organic device Lab. & Dept. of Electronic&Electronics&Computer Eng. Dong-A Univ.) ;
  • Song, Chung-Kun (Nano Organic device Lab. & Dept. of Electronic&Electronics&Computer Eng. Dong-A Univ.)
  • Published : 2004.08.23

Abstract

In this paper, we have fabricated pentacene thin film transistors (TFTs) using polyvinylphenol (PVP) copolymer and cross-linked PVP as gate insulator on glass and plastic (PET) substrate. Depending on the density of PVP and cross-link material the performance has been changed. We obtained the best device performance with the mobility of 0.32cm2/V${\cdot}$sec and the on/off current ratio of 1.19${\times}$106 for the case of 10wt% PVP copolymer mixed with 5wt% poly (melamine-co-formaldehyde). Additionally using pentacene TFTs with the above PVP gate insulator, we fabricated the integrated circuits including inverter which produced the gain of 9.7.

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