한국정보디스플레이학회:학술대회논문집
- 2004.08a
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- Pages.1011-1014
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- 2004
A New DC-DC Converter for Gate Driver Circuit Using Low Temperature Poly-Si TFT
- Choi, Jin-Young (Division of Electrical and Computer Engineering Hanyang University) ;
- Cho, Byoung-Chul (Division of Electrical and Computer Engineering Hanyang University) ;
- Shim, Hyun-Sook (Division of Electrical and Computer Engineering Hanyang University) ;
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Kwon, Oh-Kyong
(Division of Electrical and Computer Engineering Hanyang University)
- Published : 2004.08.23
Abstract
In this paper, we present a new DC-DC converter for gate driver circuit in low temperature poly-Si TFT technology. It is composed of a newly developed charge pump circuit and a regulator circuit. When the input voltage is 5V, the efficiency of a positive charge pump used in the DC-DC converter and that of a negative charge pump is 69.0% and 57.1%, respectively. The output voltage of DC-DC converter varies 200mV when the target voltages of DC-DC converter are 9V, -6V and the threshold voltage of TFTs varies
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