A new crystallization method using a patterned $CeO_2$ seed layer on the plastic substrate

  • Shim, Myung-Suk (School of Information and Communication Engineering, Sungkyunkwan University) ;
  • Kim, Do-Young (School of Information and Communication Engineering, Sungkyunkwan University) ;
  • Seo, Chang-Ki (School of Information and Communication Engineering, Sungkyunkwan University) ;
  • Yi, Jun-Sin (School of Information and Communication Engineering, Sungkyunkwan University) ;
  • Park, Young-Soo (Samsung Advanced Institute of Technology)
  • Published : 2004.08.23

Abstract

We report crystallization of a-Si using XeCl excimer laser annealing [1] on the plastic substrate. We tried to obtain higher crystallinity as the effect of $CeO_2$ seed layer patterned. Also, we tried to control the direction of crystallization growth of silicon layer for lateral growth as the type of $CeO_2$ pattern. This crystallization method plays an important role in low temperature poly-Si (LTPS) [2] process and flexible display.

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