한국정보디스플레이학회:학술대회논문집

한국정보디스플레이학회 (The Korean Infomation Display Society)
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Poly-Si TFT Fabricated at 170$^{\circ}C$ Using ICP-CVD and Excimer Laser Annealing for Plastic Substrates

  • Han, Sang-Myeon (School of Electrical Engineering, Seoul National University) ;
  • Shin, Moon-Young (School of Electrical Engineering, Seoul National University) ;
  • Park, Hyun-Joong (School of Electrical Engineering, Seoul National University) ;
  • Lee, Hye-Jin (School of Electrical Engineering, Seoul National University) ;
  • Han, Min-Koo (School of Electrical Engineering, Seoul National University)
  • 발행 : 2004.08.23
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초록

We have fabricated poly-Si TFTs at 170$^{\circ}C$ using inductively coupled plasma chemical vapor deposition (ICP-CVD) and excimer laser annealing (ELA). A Poly-Si film with large grains exceeding 5000${\AA}$ and a $SiO_2$ film with high breakdown field are deposited by ICP-CVD. A high mobility exceeding 100$cm^2$/Vs with a low sub-threshold swing of 0.76V/dec was obtained.

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