한국정보디스플레이학회:학술대회논문집
- 2004.08a
- /
- Pages.1003-1006
- /
- 2004
Poly-Si TFT Fabricated at 170$^{\circ}C$ Using ICP-CVD and Excimer Laser Annealing for Plastic Substrates
- Han, Sang-Myeon (School of Electrical Engineering, Seoul National University) ;
- Shin, Moon-Young (School of Electrical Engineering, Seoul National University) ;
- Park, Hyun-Joong (School of Electrical Engineering, Seoul National University) ;
- Lee, Hye-Jin (School of Electrical Engineering, Seoul National University) ;
-
Han, Min-Koo
(School of Electrical Engineering, Seoul National University)
- Published : 2004.08.23
Abstract
We have fabricated poly-Si TFTs at 170
Keywords