한국정보디스플레이학회:학술대회논문집

The Korean Infomation Display Society (한국정보디스플레이학회)
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Electrical Effects in Organic Thin-Film Transistors Using Polymerized Gate Insulators by Vapor Deposition Polymerization (VDP)

  • Lee, Dong-Hyun (Dept. of Molecular Electronic Engineering & Center for Organic Materials and Information Devices (COMID), Hongik Univ.) ;
  • Pyo, Sang-Woo (Center for Organic Materials and Information Devices, Hongik Univ., Dept. of Electrical Information & Control Eng., Hongik Univ.) ;
  • Koo, Ja-Ryong (Center for Organic Materials and Information Devices, Hongik Univ., Dept. of Electrical Information & Control Eng., Hongik Univ.) ;
  • Kim, Jun-Ho (Center for Organic Materials and Information Devices, Hongik Univ., Dept. of Electronic Eng Hongik Univ.) ;
  • Shim, Jae-Hoon (Center for Organic Materials and Information Devices, Hongik Univ.) ;
  • Kim, Young-Kwan (Center for Organic Materials and Information Devices, Hongik Univ., Dept. of Chemical Eng Hongik Univ.)
  • Published : 2004.08.23
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Abstract

In this paper, it was demonstrated that the organic thin film transistors with the organic gate insulators were fabricated by vapor deposition polymerization (VDP) processing. The configuration of OTFTs was a staggered-inverted top-contact structure and gate dielectric layer was deposited with 0.45 ${\mu}m$ thickness. In order to form polyimide as a gate insulator, VDP process was also introduced instead of spin-coating process. Polyimide film was respectively co-deposited with different materials. One was from a 4,4'-oxydiphthalic anhydride (ODPA) and 4, 4'-oxydianiline (ODA) and the other was from 2,2-bis(3,4-dicarboxyphenyl) hexafluoropropane dianhydride (6FDA) and ODA. And it was also cured at 150 $^{\circ}C$ for 1 hour followed by 200 $^{\circ}C$ for 1 hour. Electrical characteristics of the organic thin-film transistors were detailed comparisons between the ODPA-ODA and the 6FDA-ODA which were used as gate insulator.

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