한국정보디스플레이학회:학술대회논문집

The Korean Infomation Display Society (한국정보디스플레이학회)
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The Preparation of $Ce^{3+}$doped Y-SiAlON for LED Phosphor.

  • Ahn, Joong-In (Advanced Materials Division, Korea Research Institute of Chemical Technology, Department of Chemistry, Sungkyunkwan University) ;
  • Han, Cheong-Hwa (Department of Chemistry, Sungkyunkwan University) ;
  • Kim, Chang-Hae (Department of New Materials Engineering, Halla University)
  • Published : 2004.08.23
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Abstract

We have investigated luminescence properties of Ln-SiAlON materials doped with $Ce^{3+}$. Low-energy 4f${\leftrightarrow}$5d transitions were observed as compared to the luminescence of this ion doped in oxidic host-lattices.$^1$ Ce-doped Y-a-SiAlON show bright long wavelength luminescence with high absorption for 305 and 455nm excitation. In our experiment, the sintering temperature of this material(1400$^{\circ}C$) was lower than that of normal sintering temperature (1700$^{\circ}C$). However, Single phase of SiAlON was not composed we observed the YAG phase.

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