한국정보디스플레이학회:학술대회논문집

The Korean Infomation Display Society (한국정보디스플레이학회)
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Ion-induced secondary electron emission coefficient and work function for MgO thin film with $O_2$ plasma treatment

  • Jung, J.C. (Charged Particle Beam and Plasma Laboratory / PDP Research Center, Department of Electrophysics, Kwangwoon University) ;
  • Jeong, H.S. (Charged Particle Beam and Plasma Laboratory / PDP Research Center, Department of Electrophysics, Kwangwoon University) ;
  • Lee, J.H. (Charged Particle Beam and Plasma Laboratory / PDP Research Center, Department of Electrophysics, Kwangwoon University) ;
  • Oh, J.S. (Charged Particle Beam and Plasma Laboratory / PDP Research Center, Department of Electrophysics, Kwangwoon University) ;
  • Park, W.B. (Charged Particle Beam and Plasma Laboratory / PDP Research Center, Department of Electrophysics, Kwangwoon University) ;
  • Lim, J.Y. (Charged Particle Beam and Plasma Laboratory / PDP Research Center, Department of Electrophysics, Kwangwoon University) ;
  • Cho, J.W. (Charged Particle Beam and Plasma Laboratory / PDP Research Center, Department of Electrophysics, Kwangwoon University) ;
  • Choi, E.H. (Charged Particle Beam and Plasma Laboratory / PDP Research Center, Department of Electrophysics, Kwangwoon University)
  • Published : 2004.08.23
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Abstract

The ion-induced secondary electron emission coefficient ${\gamma}$ and work function for MgO thin film with $O_2$ plasma treatment has been investigated by ${\gamma}$ -FIB (focused ion beam) system. The MgO thin film deposited from sintered material with $O_2$ plasma treatment is found to have higher ${\gamma}$ and lower work function than those without $O_2$ plasma treatment. The energy of various ions used has been ranged from 100eV to 200eV throughout this experiment. It is found that the highest secondary electron emission coefficient ${\gamma}$ has been achieved for 10 minutes of $O_2$ plasma treatment under RF power of 50W.

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