한국정보디스플레이학회:학술대회논문집

한국정보디스플레이학회 (The Korean Infomation Display Society)
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Layer-by-layer nitrogenation of microcrystalline silicon for TFT applications

  • Bu, I. (Engineering Department, Cambridge University) ;
  • Milne, W.I. (Engineering Department, Cambridge University)
  • 발행 : 2004.08.23
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초록

We have optimized the low temperature growth of microcrystalline silicon at 80$^{\circ}C$. This material has been used to fabricate bottom gate ${\mu}c$-Si:H TFTs by using a layer-by-layer nitrogenation process. By using this process the amorphous incubation layer can be converted into silicon nitride and leads to an increase in field effect mobility of the TFT

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