Effect of various MgO E-beam evaporation sources on the characteristics of MgO protecting layer of AC-PDP

  • Park, Sun-Young (School of Materials Science and Engineering, Seoul National University) ;
  • Lee, Mi-Jung (School of Materials Science and Engineering, Seoul National University) ;
  • Kim, Soo-Gil (School of Materials Science and Engineering, Seoul National University) ;
  • Kim, Hyeong-Joon (School of Materials Science and Engineering, Seoul National University) ;
  • Moon, Sung-Hwan (School of Materials Science and Engineering, Seoul National University, Center Research Institute, Corporate R&D Center, Samsung SDI) ;
  • Kim, Jong-Kuk (Surface Engineering Dept., Korea Institute of Machinery & Materials)
  • Published : 2004.08.23

Abstract

MgO thin films were deposited bye-beam evaporation on $SiO_2$/Si wafers for the application of a protective layer in alternating current plasma display panels (AC-PDPs). Three different MgO sources, single crystal, melted polycrystal and sintered polycrystal, were used to find out the change of the properties of MgO protective layer depending on the source type. The properties of MgO thin films such as density, orientation and surface morphology were influenced by the source type. MgO thin films deposited with the melted polycrystal source had the highest density with the highest (100) preferred orientation, whereas the films deposited with the sintered polycrystal source had the lowest density with less preferred orientation. Such a result seems to be originated from the different mobility of adatoms on the surface of the deposited MgO thin films. Different microstructures of MgO thin films deposited even in the same deposition condition were observed depending on the MgO source type, resulting in different discharge characteristics.

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