Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)
- 2004.08c
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- Pages.801-803
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- 2004
The Analysis of the Nano-Scale MOSFET Resistance
- Lee Jun Ha (Dept of Computer System Engineering, Sangmyung University) ;
- Lee Hoong Joo (Dept of Computer System Engineering, Sangmyung University) ;
- Song Young Jin (Dept. of Computer Science, Konyang University)
- Published : 2004.08.01
Abstract
The current drive in an MOSFET is limited by the intrinsic channel resistance. All the other parasitic elements in a device structure playa significant role and degrade the device performance. These other resistances need to be less than