A Half-VDD Voltage Generator for Low-Voltage DRAM

  • Baek Su-Jin (Department of Electronic Engineering, Changwon National University) ;
  • Kim Tae-Hong (Department of Electronic Engineering, Changwon National University) ;
  • Cho Seong-Ik (Dept.of EE, Chonbuk National University) ;
  • Eun Jae-Jeong (Department of Electronic Engineering, Changwon National University) ;
  • Ko Bong-Jin (Department of Electronic Engineering, Changwon National University) ;
  • Ha Pan-Bong (Department of Electronic Engineering, Changwon National University) ;
  • Kim Young-Hee (Department of Electronic Engineering, Changwon National University)
  • Published : 2004.08.01

Abstract

A Half-VDD Voltage(VHDD) Generator using PMOS pull-up transistor and NMOS pull-down transistor was newly proposed for low-voltage DRAMs. The driving current was increased and the power-on settling time was reduced in the new circuit. The newly proposed VHDD generator worked successfully at VDD at 1.5V and fabricated using 0.18um CMOS twin-well technology.

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