Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2004.07b
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- Pages.1254-1257
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- 2004
A Study on the Design of Built-in Current Sensor for High-Speed Iddq Testing
고속 전류 테스팅 구현을 위한 내장형 CMOS 전류 감지기 회로의 설계에 관한 연구
- Kim, Hoo-Sung (Department of Electrical Engineering, KOREA University) ;
- Park, Sang-Won (Department of Electrical Engineering, KOREA University) ;
- Hong, Seung-Woo (Department of Electrical Engineering, KOREA University) ;
- Sung, Man-Young (Department of Electrical Engineering, KOREA University)
- Published : 2004.07.05
Abstract
This paper presents a built-in current sensor(BICS) that can detect defects in CMOS integrated circuits through current testing technique - Iddq test. Current test has recently been known to a complementary testing method because traditional voltage test cannot cover all kinds of bridging defects. So BICS is widely used for current testing. but there are some critical issues - a performance degradation, low speed test, area overhead, etc. The proposed BICS has a two operating mode- normal mode and test mode. Those methods minimize the performance degradation in normal mode. We also used a current-mode differential amplifier that has a input as a current, so we can realize higher speed current testing. Furthermore, only using 10 MOSFETS and 3 inverters, area overhead can be reduced by 6.9%. The circuit is verified by HSPICE simulation with 0.25 urn CMOS process parameter.