A Study on the Design of Built-in Current Sensor for High-Speed Iddq Testing

고속 전류 테스팅 구현을 위한 내장형 CMOS 전류 감지기 회로의 설계에 관한 연구

  • Kim, Hoo-Sung (Department of Electrical Engineering, KOREA University) ;
  • Park, Sang-Won (Department of Electrical Engineering, KOREA University) ;
  • Hong, Seung-Woo (Department of Electrical Engineering, KOREA University) ;
  • Sung, Man-Young (Department of Electrical Engineering, KOREA University)
  • 김후성 (고려대학교 전기공학과) ;
  • 박상원 (고려대학교 전기공학과) ;
  • 홍승우 (고려대학교 전기공학과) ;
  • 성만영 (고려대학교 전기공학과)
  • Published : 2004.07.05

Abstract

This paper presents a built-in current sensor(BICS) that can detect defects in CMOS integrated circuits through current testing technique - Iddq test. Current test has recently been known to a complementary testing method because traditional voltage test cannot cover all kinds of bridging defects. So BICS is widely used for current testing. but there are some critical issues - a performance degradation, low speed test, area overhead, etc. The proposed BICS has a two operating mode- normal mode and test mode. Those methods minimize the performance degradation in normal mode. We also used a current-mode differential amplifier that has a input as a current, so we can realize higher speed current testing. Furthermore, only using 10 MOSFETS and 3 inverters, area overhead can be reduced by 6.9%. The circuit is verified by HSPICE simulation with 0.25 urn CMOS process parameter.

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