한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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- Pages.1066-1069
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- 2004
비정질 As-Ge-Se-S 박막에서의 Ag 도핑에 따른 회절효율 특성 연구
The characteristic of diffraction efficiency depending on Ag doping on film of amorphous AsGeSeS
- Lee, Ki-Nam (Department of Electronic Materials Engineering of Kwangwoon Unil.) ;
- Yeo, Cheol-Ho (Department of Electronic Materials Engineering of Kwangwoon Unil.) ;
- Kyung, Shin (Department of Electronic Materials Engineering of Kwangwoon Unil.) ;
- Chung, Hong-Bay (Department of Electronic Materials Engineering of Kwangwoon Unil.)
- 발행 : 2004.07.05
초록
This paper shows the characteristic of diffraction efficiency on film of amorphous AsGeSeS according to Ag doping. We compare amorhous AsGeSeS with the characteristics of AsGeSeS/Ag (10nm) and AsGeSeS/Ag (20m). We made film such as