Dielectric and Structural of PST Thin Films with annealing temperature prepared by Sol-gel method for Phase shifters

Phase shifters 응용을 위한 Sol-gel 법으로 제작된 $(Pb_{0.5},Sr_{0.5})TiO_3$ 박막의 열처리 온도에 따른 구조 및 유전 특성

(Pb,Sr)TiO3 (PST) thin films were fabricated by using the alkoxide-based sol-gel method. The PST stock solution was made and then spin-coated onto a PUTi/SiO2/Si substrate. The coating and drying procedures were repeated several times, and the PST thin films were sintered at 450-650 C for 1 h. All PST thin films showed dense and homogeneous structures without the presence of any rosette structure. The thicknesses of the PST thin films were approximately 200 nm. The dielectric constant and the dielectric loss of the PST thin films sintered at 550 C were about 404 and 0.0023, respectively. The leakage current density of the PST thin film sintered at 550 C was 3.13 x 10-8 A/cm2 at 1 V.