한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
- /
- Pages.768-771
- /
- 2004
초고주파 응용을 위한 MgO 버퍼층을 이용한 PST(100) 박막의 유전적 특성
Dielectric properties of highly (100) oriented (Pb0.5, Sr0.5)TiO3thin films grown on Si with MgO buffer layer
- Eom, Joon-Chul (Seoul-Jeongsu Polytechnic College) ;
- Lee, Sung-Gap (Seonam Univ.) ;
- Kim, Chang-Il (Chungang Uni.)
- 발행 : 2004.07.05
초록
Pb0.5,Sr0.5TiO3(PST) thin films were deposited on Si with MgO (100) buffer layer by the alkoxide-based sol-gel method. Structural and dielectric properties of PST thin films for the tunable microwave device applications were investigated. For the MgO/Si buffer layer, the PST thin films exhibited highly (100) orientation. The MgO buffer layer affects the stress state of the (100)-oriented PST thin films. The dielectric constant, tunability, and FOM of the highly (100)-oriented PST thin film increased with increasing annealing temperature due to the decrease in lattice distortion. The differences in dielectric properties may be attributed to the change in the film stress. The dielectric constants, dielectric loss and tunability of the PST thin films deposited on the MgO/Si substrates measured at 10 kHz were 822, 0.025, and 80.1%, respectively.