Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2004.07b
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- Pages.734-737
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- 2004
The etching properties of MgO thin films in $Cl_2/Ar$ gas chemistry
유도 결합 플라즈마를 이용한 MgO 박막의 식각특성
- Koo, Seong-Mo (Chung-Ang Uni.) ;
- Kim, Chang-Il (Chung-Ang Uni.)
- Published : 2004.07.05
Abstract
The metal-ferroelectric-semiconductor (MFS) structure is widely studied for nondestructive readout (NDRO) memory devices, but conventional MFS structure has a critical problem. It is difficult to obtain ferroelectric films like PZT on Si substrate without interdiffusion of impurities such as Pb, Ti and other elements. In order to solve these problems, the metal-ferroelectric-insulator-semiconductor (MFIS) structure has been proposed with a buffer layer of high dielectric constant such as MgO,