한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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- Pages.734-737
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- 2004
유도 결합 플라즈마를 이용한 MgO 박막의 식각특성
The etching properties of MgO thin films in $Cl_2/Ar$ gas chemistry
- Koo, Seong-Mo (Chung-Ang Uni.) ;
- Kim, Chang-Il (Chung-Ang Uni.)
- 발행 : 2004.07.05
초록
The metal-ferroelectric-semiconductor (MFS) structure is widely studied for nondestructive readout (NDRO) memory devices, but conventional MFS structure has a critical problem. It is difficult to obtain ferroelectric films like PZT on Si substrate without interdiffusion of impurities such as Pb, Ti and other elements. In order to solve these problems, the metal-ferroelectric-insulator-semiconductor (MFIS) structure has been proposed with a buffer layer of high dielectric constant such as MgO,