Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2004.07b
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- Pages.688-692
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- 2004
A Study on properties of ZnO thin film for Film Bulk Acoustic Resonator (FBAR) application
FBAR 응용을 위한 ZnO 박막의 특성에 대한 연구
- Jeong, Young-Hak (Sungkyunkwan University) ;
-
Lee, Kyu-Il
(Sungkyunkwan University)
;
- Kim, Eun-Kwon (Sungkyunkwan University) ;
- Lee, Jong-Duk (Seonam University) ;
- Song, Joon-Tae (Sungkyunkwan University)
- Published : 2004.07.05
Abstract
In this paper, zinc oxide (ZnO) films with c-axis (002) orientation have been successfully deposited on the Al/Si substrate by rf magnetron sputtering method. The deposited films were characterized by substate temperature. Physical and structural properties of the deposited films were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM) measurement. Electrical Properties of the deposited films were investigated by 4-poing probe and LCR meter measurement. The optimal condition in this experimental result was found at foot of the substrate temperature and shown good film quality for FBAR application.