Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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2-2-inch QCIF+ a-Si TFT-LCD Using Integrated Row Driver Circuits

Row Driver 회로가 집적된 2.2-inch QCIF+ a-Si TFT-LCD

  • Yun, Y.J (Development Division, BOE HYDIS TECHNOLOGY CO., LTD.) ;
  • Han, S.W. (Development Division, BOE HYDIS TECHNOLOGY CO., LTD.) ;
  • Jung, C.G. (Development Division, BOE HYDIS TECHNOLOGY CO., LTD.) ;
  • Chung, K.H. (Development Division, BOE HYDIS TECHNOLOGY CO., LTD.) ;
  • Kim, H.S. (Development Division, BOE HYDIS TECHNOLOGY CO., LTD.) ;
  • Kim, S.Y. (Development Division, BOE HYDIS TECHNOLOGY CO., LTD.) ;
  • Lim, Y.J. (Development Division, BOE HYDIS TECHNOLOGY CO., LTD.)
  • 윤영준 (비오이하이디스테크놀로지 개발본부) ;
  • 한승우 (비오이하이디스테크놀로지 개발본부) ;
  • 정철규 (비오이하이디스테크놀로지 개발본부) ;
  • 정경훈 (비오이하이디스테크놀로지 개발본부) ;
  • 김하숙 (비오이하이디스테크놀로지 개발본부) ;
  • 김서윤 (비오이하이디스테크놀로지 개발본부) ;
  • 임영진 (비오이하이디스테크놀로지 개발본부)
  • Published : 2004.11.11
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Abstract

A 2.2-inch QCIF+ $(176{\times}RGB{\times}220)$ TFT-LCD with integrated row driver was developed using a standard amorphous silicon TFT technology. At low temperature $({\sim}-20^{\circ}C)$, the integrated row driver operation is dramatically effected by the electron drift mobility variation $({\sim}50%)$ and the threshold voltage shift $({\sim}1V)$ of the a-Si TFT. We studied the temperature dependency of the circuit design and found that higher on-current circuit is important to guarantee good operation in wide temperature range.

Keywords