한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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- Pages.464-467
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- 2004
고흡수율 비냉각형 적외선 센서의 브릿지 길이에 따른 저항특성 연구
Study on the Resistance characteristics with the Bridge length of the Uncooled infrared sensor with high absorptance
- Kang, Hyeong-Gon (KBSI Jeonju branch) ;
- Lee, Hae-Seong (KBSI Jeonju branch) ;
- Lim, Yong-Geun (Ocas Co.) ;
- Park, Seung-Bum (Ocas Co.) ;
- Lee, Hong-Ki (Ocas Co.)
- 발행 : 2004.11.11
초록
An uncooled infrared sensor has been prepared with sputtering, plasma ash, ICP, and PECVD on a Si wafer In order to analyze the resistance characteristics with the bridge length in the infrared sensor, three samples were prepared with lengths of 0 (no bridge), 15 (short bridge), and 29 urn (long bridge), respectively. I-V curves were measured for their resistance characteristics and EPMA for the dopping concentration of the amorphous Si. The phosphorus concentration was about 4 % and the resistance was increased with the bridge length. The bridge length of cantilever is very important factor for improvement of the efficiency in an infrared sensor.