Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Study on the dark current reduction of $HgI_2$ radiation detector

$HgI_2$ 방사선 검출기의 누설전류 저감에 관한 연구

  • 신정욱 (인제대학교 의용공학과) ;
  • 강상식 (인제대학교 의용공학과) ;
  • 김진영 (인제대학교 의용공학과) ;
  • 김경진 (인제대학교 의용공학과) ;
  • 박성광 (부산백병원 방사선종양학과) ;
  • 조흥래 (부산백병원 방사선종양학과) ;
  • 이형원 (인제대학교 의료영상 연구소) ;
  • 남상희 (인제대학교 의료영상 연구소)
  • Published : 2004.11.11
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Abstract

Analog film/screen systems have been being changed to a digital x-ray imaging device using direct conversion materials. Photocoductors for a direct detection flat-panel imager require high x-ray absorption, ionization and charge collection, low leakage current and large area deposition. In this work, $HgI_2$ films with excellent properties for x-ray detector were deposited by screen printing method. The thickness of $HgI_2$ film was about $150\;{\mu}m$. The passivation layer is fabricated using a-Se and parlyene, the both fabrication $HgI_2$ film were compared for analyzing the leakage current reduction. We measured electrical properties-leakage current, photosensitivity, SNR though I-V measurement, As the result, $HgI_2$ film using a-Se passivation layer had the greater

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